China AI ObservatoryHBM milestonereported
Small-volume HBM3E reportedly produced in August 2026
As of 2026-09-11The Information · CXMT’s reported HBM3E progress (source)CXMT · DRAM portfolio (source)Company dossier · Reviewed 2026-09-20
CXMT 长鑫存储
China’s principal DRAM and HBM company to watch.
What the evidence says
Fifth-generation commodity DRAM is company-reported in mass production, but adequate domestic HBM volume and frontier HBM performance remain separate milestones. The reported NAND project is an R&D-line plan, not evidence of qualified commercial output.
Reuters · China's CXMT says new memory-chip platform enters mass production (source)The Information · CXMT’s reported HBM3E progress (source)Reuters · CXMT prepares NAND research line as memory shortage persists (source)CXMT · DRAM portfolio (source)Critical facts
Fifth-generation DRAM platformreported
CXMT says its fifth-generation platform entered mass production using quadruple patterning and an 11.95 nm active-area half-pitch; independent yield and reliability data were not disclosed.
As of 2026-09-20Reuters · China's CXMT says new memory-chip platform enters mass production (source)LPDDR5X productionreported
Two 24 Gb LPDDR5X products are company-reported in mass production, with at least 50% more gross dies per wafer than the fourth-generation platform on an 8 Gb baseline; gross dies are potential dies before defective units are excluded, not tested yield.
As of 2026-09-20Reuters · China's CXMT says new memory-chip platform enters mass production (source)NAND expansion planreported
Reuters reports CXMT plans a Beijing NAND R&D production line and has discussed prospective AI-storage customers; no operating date or commercial-production commitment was established.
As of 2026-09-18Reuters · CXMT prepares NAND research line as memory shortage persists (source)Company news
Timeline →reported
CXMT says its fifth-generation DRAM platform and 24 Gb LPDDR5X entered mass production
At the 2026 World Manufacturing Convention, CXMT said its fifth-generation DRAM platform had entered mass production using quadruple patterning and an 11.95 nm active-area half-pitch. The company also said two 24 Gb LPDDR5X products made on the platform were in mass production.
Why it matters. This is a material claimed density and manufacturing milestone for China's commodity DRAM base, but not an HBM milestone or an independent yield result. CXMT's claim of at least 50% more gross dies per wafer than its fourth-generation platform measures potential dies before defects are excluded. The company said it worked with Chinese equipment makers on critical steps without naming them or establishing a fully domestic process flow.
Reuters · China's CXMT says new memory-chip platform enters mass production (source)reported
CXMT reportedly prepares to enter NAND with a Beijing R&D production line
Reuters reports that CXMT plans a NAND flash R&D production line at its new Beijing plant and has discussed prospective AI-system storage customers, extending beyond its core DRAM business.
Why it matters. The plan would broaden China's domestic memory base and put CXMT into YMTC's main market, but it is not commercial-production evidence. Reuters could not establish when the line would operate or whether CXMT would proceed beyond research and trial production; CXMT did not comment.
Reuters · CXMT prepares NAND research line as memory shortage persists (source)reported
Memory constraints reach accelerator pricing
HBM shortages are raising Chinese accelerator prices.
Why it matters. Domestic memory qualification remains a key condition for expanding compute economically.
Reuters · HBM shortages raise Chinese accelerator prices (source)reported
HBM milestone reported at CXMT
Reports describe initial HBM3E progress.
Why it matters. Track customer acceptance and production yield.
The Information · CXMT’s reported HBM3E progress (source)